High k gate dielectric selection for germanium based cmos devices. The resulting metal gate high k dielectric stacks have i equivalent oxide thickness eot of 1. In the assignment, brief history of high k development, the requirements of high k oxides, various. Dielectric breakdown characteristics of stacked highk dielectrics byoung hun lee1,2 and rino choi3. Hafniumdoped tantalum oxide high k gate dielectric films for future cmos technology.
Ma yale university, center for microelectronics, and department of electrical engineering new haven, ct 065208284 introduction highk dielectrics are being actively pursued by the semiconductor industry to replace sio2 as the gate dielectric for future generations of cmos transistors. Abstracts of papers in physics and technology for highk gate dielectrics 4 ecs transactions 3 3, 2006. Main highk gate dielectrics for cmos technology highk gate dielectrics for cmos technology a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the. In addition, n and ptype doped polysilicon gate is used for cmos devices and b in ptype polysilicon diffuses into and through thin gate oxide, severely degrades pfet performance. Mos capacitors with various gate electrodes are exposed to typical cmos process steps and evaluated with capacitance voltage cv and current voltage jv measurements. In advanced cmosmos ic design technology, dielectrics with values of are used. For these reasons, the highk gate dielectrics have been intensively investigated in order to possibly replace the conventional sio2 in silicon technology. Highk gate dielectrics for emerging flexible and stretchable. Highk gate dielectrics for cmos technology download. For gate materials, traditional sio 2 is being replaced by highj dielectrics to reduce the gate leakage current. Characterization of highk gate dielectrics using mos capacitors haimanti chakraborty, dr. Isbn 9783527330324 a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing. Highk gate dielectrics for cmos technology by gang he.
A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Hafniumbased highk gate dielectrics author kyawthetlatt. Technology initiated the development of atomic layer deposition highk films for dram memory devices. Aug 24, 2012 he obtained his academic degrees from the institute of solid state physics of the chinese academy of sciences. Majority of prior works treated the high k dielectric as a single layer dielectric like thermally grown sio2 while the actual structure of high k. Why is a metal used instead of polysilicon for highk gate. Cmos integration of epitaxial gd2o3 highk gate dielectrics.
Request pdf highk gate dielectrics for cmos technology a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from. Successful integration of high k dielectrics into cmos technology poses enormous challenges. Fabrication and evaluation of devices containing high k gate. A stateoftheart overview of high k dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Many materials systems are currently under consideration as potential replacements for sio 2 as the gate dielectric material for sub0. With an overdrive account, you can save your favorite libraries for ataglance information about availability. Yue kuo a novel high k gate dielectric material, i. Highk gate dielectrics for cmos technology cern document. His research interests and efforts cover the areas of the preparation, characterization, fundamental understanding and associated applications of high k gate dielectric thin films. Abstract a stateoftheart overview of high k dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Development of highk metal gate cmos technology in selete vth control with elementincorporated highk in 2006, when the present fep program started, it had been clarified that the vthcontrol by the dm with two values of work function wf is difficult in the gate first cmos fabrication procedure.
Although several metal gate electrodes have been identified for sio2 dielectrics based on their work function, thermal stability and carrier concentration, their compatibility with highk dielectrics is not fully understood. Aug 25, 2012 a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. However, high k dielectrics have also faced lots of integration challenges, such as charge trapping and mobility degradation. Intel made a significant breakthrough in the 45nm process by using a highk hik material called hafnium to replace the transistors silicon dioxide gate dielectric, and by using new metals to replace the n and pmos polysilicon gate electrodes.
High k gate dielectrics for future cmos technology t. Successful integration of highk dielectrics into cmos technology poses enormous challenges. Application of high k dielectrics in cmos damage and. Dual metal gate integration issues for advanced cmos devices are also discussed in this thesis and two gatefirst integration schemes for dual mg cmos technology are proposed in chapter 4.
Due to his outstanding performance in research work, he won a scholarship award from the chinese academy of sciences in 2005 and a grant of the japanese. Characterization of highk gate dielectrics using mos. In general, dielectric breakdown mechanisms in amorphous films can be categorized as either intrinsic or extrinsic in nature he and sun, highk gate dielectrics for cmos technology, 2012, p. The current status of high k dielectrics in dram and cmos manufacturing is introduced as well as the commonly used deposition methods and equipment types.
In general, dielectric breakdown mechanisms in amorphous films can be categorized as either intrinsic or extrinsic in nature he and sun, high k gate dielectrics for cmos technology, 2012, p. Rf cmos technology scaling in highkmetal gate era 0. A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are a. Electrical and material characteristics of hafniumbased.
Highk gate dielectrics for cmos technology request pdf. To match the properties of highk dielectrics with those of conventional silicon oxide, the existence of various defects and how they affect the reliability through. A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological. In bulk high k devices, shallow electron traps at the conduction bandedge have been. Advanced metal gatehighk dielectric stacks for high. However, one of the key issues concerning new gate dielectrics is the low crystallization temperature and difficult to integrate them into traditional cmos processes. Pdf abstracts of papers in physics and technology for high.
Highk materials and metal gates for cmos applications. Pdf physics and technology of high k gate dielectrics ii. Although several metal gate electrodes have been identified for sio2 dielectrics based on their work function, thermal stability and carrier concentration, their compatibility with high k dielectrics is not fully understood. Highk gate dielectrics for cmos technology by gang he editor zhaoqi sun editor.
Request pdf on aug 23, 2012, gang he and others published highk gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. Abstracts of papers in physics and technology for highk. Application of high k dielectrics in cmos technology and emerging new technology rich liu 1 and taibor wu 2 1emerging central lab, macronix international co. Highk gate dielectrics for cmos technology semantic scholar. Yue kuo mixed oxide highk gate dielectrics interface layer structure. Aug 23, 2012 summary this chapter contains sections titled. Next, after presenting the design and properties of highk polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as tft gate dielectric thin. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability. Xxxii, 558 pages, hardcover read more powered by wpematico. Highk dielectrics the future of silicon transistors. Highk gate dielectrics for cmos technology edited by gang he and zhaoqui sun. The effect of highk gate dielectrics on deep submicrometer.
A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the. A stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both. Abstract a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Application of high k dielectrics in cmos damage and thus.
Incorporation of ge on high k dielectric material for. Ma yale university, center for microelectronics, and department of electrical engineering new haven, ct 065208284 introduction high k dielectrics are being actively pursued by the semiconductor industry to replace sio2 as the gate dielectric for future generations of cmos transistors. Development of highk metal gate cmos technology in selete. The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, cmos processing with highk layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization. Highk gate dielectrics for cmos technology gang he.
Fabrication and evaluation of devices containing high k. Highk dielectrics are being actively pursued by the semiconductor industry to replace sio2 as the gate dielectric for future generations of cmos transistors. Dielectric breakdown characteristics of stacked highk. Lee and others published highk gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, cmos processing with high k layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization. Highk gate dielectrics for cmos technology advanced. Hafniumdoped tantalum oxide highk gate dielectric films for future cmos technology. Issues relating to the highk gate dielectric are among the greatest challenges for the evolving international technology roadmap for semiconductors itrs. As a result, the power consumption in recent cpu from intel dropped by. Gang he editor gang he is professor at the school of. Edited by gang he and zhaoqui sun gang he a he su highk. During early stages, devices made by depositing hfo 2. In the near future, however, further scaling will require new dielectric materials and metal electrodes to meet the targets of the international technology roadmap for semiconductors itrs for gate leakage currents and. The resulting metal gatehighk dielectric stacks have i equivalent oxide thickness eot of 1.
Highk dielectric highk dielectric performance manufacturing process summary introduction continual size reduction of transistors. Highk gate dielectrics for future cmos technology t. With highk gate dielectrics the gehigh k interface still remains a concern if the native geo 2 is not controlled properly. In advanced cmos mos ic design technology, dielectrics with values of are used. Highk dielectrics the future of silicon transistors matthew yang eecs 277a professor nelson outline introduction problem with sio2 solution. Isbn 9783527330324 a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a. Highk gate dielectrics by durga misra, hiroshi iwai, and hei wong. The resulting metal gate highk dielectric stacks have i equivalent oxide thickness eot of 1. Also, the advantages of highk dielectrics over lowk ones in tft applications were elaborated.
Moreover, as the eot of hfo2 gate dielectric is scaled down to the subnm regime, the gate leakage current increases quickly and is not acceptable for any practical application. Highk gate dielectric national university of singapore. Since highk dielectrics provide the same capacitance with a thicker film, the leakage current reduction, therefore, less the standby power consumption is one of the huge advantages. Epitaxial gadolinium oxide gd 2 o 3 highk dielectrics are investigated with respect to their cmos compatibility in metal oxide semiconductor mos capacitors and field effect transistors mosfets.
A stateoftheart overview of high k dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technologicalviewpoint, summarizing the latest research results and development solutions. Afanasev and others published highk gate dielectrics for cmos technology find, read and cite all the research you need on researchgate. More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their. Main highk gate dielectrics for cmos technology highk gate dielectrics for cmos technology a stateoftheart overview of highk dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. To match the properties of high k dielectrics with those of conventional silicon oxide, the existence of various defects and how they affect the reliability through trapping of charge at the defect sites must be looked at.
High kge interface the unstable native oxide on ge was the biggest stumbling block in the past for very largescale integration of cmos devices in ge. The incorporation of highk dielectrics with metal gates into a manufacturable, high volume transistor process is the result of tremendous ingenuity and effort by many scientists and engineers. Metal electrodehighk dielectric gatestack technology for power. Scaling of complementary metal oxide semiconductor cmos technology has led to ever increasing complexity and performance of electronic applications.
Once youve replace the sio2 gate oxide with highk dielectrics hafnium oxide or zirconium oxide you band diagram is completely different. Main high k gate dielectrics for cmos technology high k gate dielectrics for cmos technology a stateoftheart overview of high k dielectric materials for advanced fieldeffect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. Highk gate dielectrics for cmos technology he su eds. Abstracts of papers in physics and technology for highk gate dielectrics 4. Dielectric breakdown characteristics of high k dielectric have been intensively studied to develop a lifetime extrapolation model for device with metal high k gate stacks. High k gate dielectric selection for germanium based cmos.
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